The attributes and limitations of several chemical-vapor-deposited TIN chemistries are discussed : TiCl4+NH3 (ammonia)+(CH3)HNNH2 (methylhydrazine, MH), or (CH3)(3)CH2N (tert-butylamine, TBA) and NH3+Ti(N(CH3)(2))(4) (tetrakis dimethylamido-titanium, DIMAT). Problems associated with native oxide removal and surface cleaning are also discussed, along with results from integrating preclean and chemical vapor deposition in a clustered single-wafer platform.