The temperature dependence of the resistivity and magnetoresistance-elastoresistance of r.f.-sputtered Ni-Si thin films with variable silicon content (0-24 at.%) (determined by Rutherford backscattering spectroscopy) annealed to 300 degrees C was measured. The films, investigated by X-ray diffraction and transmission electron microscopy, exhibit a polycrystalline structure of the Ni f.c.c. type with a disorder degree which increases with the silicon content and a metallic-type conduction mechanism. The ferromagnetic properties of Ni are still preserved in the Ni-Si thin films up to 8.8 at.% silicon content.