ArF excimer laser-induced chemical vapor deposition from SiH4 and N2O precursors in parallel configuration offers unique possibilities for fine and effective control of both the deposition rate and film properties by tuning exclusively the distance between the laser beam and the substrate surface, even if the gas composition and pressure remain constant. By depositing from N2O-rich mixtures, the deposition rate, density and structure of the films can be varied in a controlled way, while lower nitrous oxide-to-silane ratios allow tailoring of film composition as well. Layer structures of designed properties can be deposited by simple realignment of the position of the laser beam.