Polycrystalline cubic yttria-stabilized zirconia films ZrO2(Y2O3) with the thickness of 0.2-0.5 mu m on silicon and sapphire substrates have been prepared by the sol-gel process. The most stable sols for film application have been obtained by anodic dissolution of yttrium in methoxyethanol solutions of zirconium butoxide in methoxyethanol. The properties of ZrO2(Y2O3) are significantly governed by annealing conditions. The best properties are demonstrated by the films annealed at 600-700 degrees C. High annealing temperature (higher than 900 degrees C) leads to degradation of the film properties owing to mechanical stress and silicon oxidation. Some dielectric properties, and most of all, the silicon-dielectric interface quality of the sol-gel films are superior to the sputtered films. The sol-gel films have been successfully used as barrier layers for preparation of high temperature superconducting Bi2Sr2CaCu2Oy films on sapphire substrates, however, they could not be used as barriers in the case of silicon substrates.