The electrical characterization of p-n diodes fabricated using a newly developed high temperature (greater than or equal to 1100 degrees C) boron diffusion source consisting of a homogenous distribution of 9A1(2)O(3).2B(2)O(3) in a SiC foam substrate was carried out and results were compared with those obtained using commercial sources. Specifically, current-voltage and open circuit voltage decay measurements were performed. The results obtained indicate that devices fabricated from the new high temperature source perform satisfactorily, exhibiting characteristics that are comparable to the characteristics of devices fabricated from the established commercial high temperature boron diffusion sources.