The effects of substrate temperature and incident power flux on weakly magnetized TiN ion plating using a spatial array of permanent magnets were studied. The time-dependent rises of temperature for a silicon wafer with various biased voltages and for HSS tools with two kinds of thickness were measured. Incident power flux defined by the variation of Si substrate temperature was calculated for various biased voltages. Using scanning electron microscopy, a surface morphology was taken to study the effect of temperature on the time-dependent microstructual and crystallographic changes of the TiN film. Some X-ray diffraction patterns for phase and orientation of the TIN film were analyzed.