A method of preparing porous silicon films by laser ablation is reported. The targets used in this process were porous silicon layers obtained by normal electrolytic anodization of p-type Si wafers in a water and ethanol solution of HF. The substrate materials tested were gold layers sputtered on crystalline silicon and fused silica disks. Most experiments were done with a continuous wave Ar ion laser working simultaneously at the blue and green wavelengths. The deposited films were investigated by scanning tunnelling microscopy and optical absorption spectroscopy.