A broad photoluminescence (PL) band at similar to 1.17 eV is observed far as-anodized porous Ge (PG) at room temperature. Oxidation at 600 degrees C induces a new intense PL band at similar to 2.15 eV whose spectral shape remains almost unchanged with progressive oxidation. Considering this result and the observed temperature dependence and decay time of the PL from thermally oxidized PG, it has been suggested that the radiative recombination through localized states is a possible pathway of the emission.