The integration of oxidic buffer layers on silicon wafers with a lattice mismatch of up to 5% at the deposition temperature is investigated via reflection high energy electron diffraction and transmission electron microscopy (TEM). The strain relaxation during the deposition is observed in situ by monitoring the lattice parameter the results can be compared with TEM images recorded after the deposition, The decrease in the strained yttria-stabilized zirconia lattice parameter on the silicon substrate proceeds within 5-7 nm to its equilibrium value. The results are used for better accomodation of multilayer packages and to reduce the epitaxial stresses in the overlayer films. Results of high temperature superconducting thin films on buffer layers with reduced epitaxial stresses are presented.