화학공학소재연구정보센터
Thin Solid Films, Vol.261, No.1-2, 25-30, 1995
Investigation of the Titanium Silicide Formation in Plasma Activated Physical Vapor-Deposition
When titanium is deposited on silicon [100] at different discharge powers in a hollow cathode are evaporator device the chemical, physical and structural properties of the thin films depend strongly on the discharge power. alpha-Ti with small gradients of structure parameters is observed at a discharge power >4.0 kW. Lower discharge powers produce films of TiSi and alpha-Ti. The film composition was calculated from absorption weighted effective X-ray integral intensities. The TiSi formation takes place during the deposition process. On the substrate surface TiSi grows followed by a mixture of TiSi and Ti. The outermost layers consist of alpha-Ti.