Titanium-aluminum multilayered thin films with a range of compositionally modulated wavelengths (CMW), also known as bilayer thicknesses, have been fabricated by d.c. magnetron sputtering. Resistivity measurements on these thin films have been performed with a view towards exploring the functional dependence of resistivity on CMW of the multilayers. An attempt has been made to rationalize the experimental results within the framework of available models for resistivity of thin films. The validity of assumptions regarding the grain size in these thin films has been discussed on the basis of fitting of the resistivity data. The data has been fitted to obtain values of probability of coherent transmission across interfaces (p) and the reflection coefficient of the grain boundaries (R). The limitations in the fitting have been pointed out. Furthermore, the relative influence of different scattering phenomena on the resistivity of these films has been studied. It is found that grain boundary scattering has a predominant influence on the resistivity.