A very low pressure (13 Pa), high substrate temperature and a.c. discharge for the nucleation siage have been applied. Uniformly oriented and textured growth of (111) diamond (dia) with dia(111)//Si(111) and dia<<1(1)over bar>0>//Si<<1(1)over bar>0> has been achieved on not only well polished but also scratched silicon substrates using hot filament chemical vapor deposition. A probable explanation, heteroepitaxy, was hypothesized. The as-grown diamond films were characterized by Raman spectroscopy, scanning electron microscopy, and X-ray analysis.