The purpose of this study is to investigate the correlations between the deposition parameters, the resulting metallurgical properties, and finally the electromigration resistance of AlCu alloy films and line structures of different compositions and different multilayer sequences. The alloy films were either sputtered onto a physical vapour deposition Ti/TiN diffusion barrier, or for selected samples, directly on the boron phosphorus silicon glass base layer. We investigated AlCu alloy films with 0.5, 1.0 and 2.0 at.% Cu content in comparison with the standard metallization AlSi1.0Cu0.5 used by Siemens, as a reference. For all alloy films investigated, the multilayer sequence is varied and the resulting properties are characterized afterwards. The results are compiled in a metallurgical data base with the following physical characterization properties : layer thickness, grain size, microhardness, wafer bow, optical surface reflectivity, and electrical resistivity. For selected samples electromigration tests, X-ray diffraction texture analysis, Auger electron spectroscopy, energy dispersive X-ray analysis, and scanning electron microscopy are applied. With the support of this data base we are able to obtain information about the correlation between microscopic and macroscopic properties of the investigated metallizations and multilayer structures, and especially about the specific influence on their electromigration resistance.