화학공학소재연구정보센터
Thin Solid Films, Vol.276, No.1-2, 296-298, 1996
Electroluminescence from Aluminum-Porous Silicon Reverse-Biased Schottky Diodes Formed on the Base of Highly Doped N-Type Polysilicon
The fabrication and the properties of light-emitting aluminum-porous silicon Schottky diodes, formed on the base of highly doped n-type polysilicon are presented. The polysilicon layer was formed on a crystalline silicon substrate by low-pressure chemical vapour deposition. Highly doped n(+)-poly-Si was then formed by phosphorous thermal diffusion. On this material the porous layer was obtained by electrochemical anodization using process parameters between electropolishing and pore formation regimes. The structure of the formed layer was investigated using the transmission electron microscopy technique. Photoluminescence spectra obtained after anodization are reported. The aluminum electrodes (pads) were obtained by standard photolithography and subsequent electrochemical aluminum anodization process. Electroluminescence (EL) was observed in reverse biased junctions. EL emission spectrum was broad and covered the whole visible range with a maximum at 770-800 nm. Current-voltage characteristics were determined at different temperatures. The optical and electrical characteristics of the developed light emitting diodes are promising for display device applications.