We report on room-temperature photoluminescence (PL) properties of light-emitting silicon produced by excimer (XeCl, ArF) laser crystallization of undoped hydrogenated amorphous silicon (a-Si:H). PL intensity increases linearly with the number of applied laser pulses. We annealed the recrystallized a-Si:H samples to modify the PL intensity and the spectral position. When compared with the XeCl laser processing, ArF laser crystallization produces more intense FL, shifted towards the blue region. Time-resolved reflectivity spectra and nucleation theory are used to study the difference between the ArF and XeCl laser crystallizations.