화학공학소재연구정보센터
Thin Solid Films, Vol.278, No.1-2, 129-134, 1996
Electrical and Photoelectrical Properties of Poly(Phenyl Azomethine Furane) Thin-Films Devices
Poly(phenyl azomethine furane) (PPAF), a conjugated system of poly-Schiff base was synthesised by condensation of p-aminobenzene with furane-2-aldehyde. Oxidative polymerization was conducted at 0-5 degrees C temperature, and the polymer formed was found to be soluble in common organic solvent. Optical properties were studied in the UV-visible-IR region. Electrical and photo electrical properties of Al/PPAF/ITO and Ag/PPAF/ITO sandwich devices were investigated by measuring the steady state photocurrent resulting from illumination. The device Al/PPAF/ITO shows a Schottky barrier at the Al-PPAF interface and ohmic contact at ITO-PPAF interface. The device Ag/PPAF/ITO shows ohmic contact at both interfaces. This behaviour has been explained in terms of P-type conductivity of the PPAF and the formation of a Schottky barrier with the low work function electrode and ohmic contact with the higher work function electrode. Under low forward bias voltage (ITO positive) ohmic conduction is observed while at higher voltage there is space charge-limited conduction (SCLC). The dependence of the photo short-circuit current on illumination intensity was discussed in detail. The C-V characteristics of both devices have also been analysed.