A new solution pretreatment has been developed to improve the surface morphology of chemical vapor deposition (CVD) Al films on SiO2. This method is simple : substrates are dipped into Ti-containing hydrofluoric acid and are dried before Al CVD. With this pretreatment, the surface morphology of the deposited Al films is improved. This improvement in surface morphology may be attributable to enhancement in Al nucleation due to the Ti adsorbed from the solution onto the substrate surface. Furthermore, the Al deposition temperature on SiO2 was able to be reduced from 260 to 210 degrees C. Lowering of the deposition temperature also improved the surface morphology of Al films, Moreover, Al films deposited at the lower temperature have a stronger (111) orientation, which is expected to provide higher electromigration resistance.