Thin Solid Films, Vol.280, No.1-2, 271-277, 1996
Amorphous Semiconducting Film Containing Nanometer Particles of Cutcnq - Preparation, Characterization and Electrical Switching Property
An amorphous functional organometallic semiconducting thin film containing nanometer particles of a CuTCNQ charge-transfer complex was prepared and characterized by UV-VIS-NIR spectral analysis, Fourier transform infrared (FTIR) spectral analysis, Fourier transform Raman spectral analysis and I-V characterization. All of the spectral analyses are identical to those of both chemically synthesized pure CuTCNQ powder produced by the reaction of CuI and TCNQ, and the solution-grown polycrystalline films. I-V characteristics showed a memory switching property in the amorphous film material sandwiched between two metal electrodes of Al and Cu at a electric field strength of about 7 000 V cm(-1).