The crystal orientation and residual stress development in AlN films deposited on borosilicate (BLC) glass substrates were investigated by X-ray diffraction. Deposition was performed using two kinds of planar magnetron sputtering system : a conventional system (CPM system) and a special system with two facing targets (FTPM system). The nitrogen gas pressure (P-N) was varied over a suitable range for each system. The diffraction patterns of the AlN films showed that the c-axis orientation was improved when the films were deposited using the CPM system at a nitrogen gas pressure lower than 1 Pa. For the CPM system, compressive residual stress was found in films deposited at P-N less than or equal to 2 Pa and tensile residual stress at P-N>2 Pa. For the FTPM system, tensile residual stress was found in films deposited at P-N less than or equal to 0.8 Pa and compressive residual stress at P-N>0.8 Pa.