Thin Solid Films, Vol.281-282, 453-456, 1996
Transition-Metal Oxide-Films Prepared by Pulsed-Laser Deposition for Atomic-Beam Detection
Resistivity of sintered metal oxides is known to change as a result of irradiation of atomic hydrogen, deuterium, nitrogen, and oxygen, but not as a result of irradiation of symmetrical diatomic molecules of these atoms. Thin films of nickel oxide, cobalt oxide and manganese oxide were formed by pulsed-laser deposition so as to enhance the sensitivity to atomic beams. The 4th harmonic of the Nd:YAG laser (gamma=266 nm, 4.8 J cm(-2)) was focused on sintered pellets, and thin films were deposited on pyrex glass substrates. The partial pressure of the oxygen gas, P-O2, and the substrate temperature, T-s, are crucial parameters for the formation of transparent monoxide-like films. Optimum conditions were determined in the range of P-O2=1.3X10(-4)-1.3X10 Pa and T-s=400-600 degrees C. The films were characterized by X-ray photoelectron spectroscopy and X-ray diffraction. The monoxide-like films are found to be more sensitive to atomic beams than sintered oxides and even NiO single crystals.