Thin Solid Films, Vol.281-282, 510-512, 1996
The Influence of Bi-Sticking Coefficient in the Growth of Bi(2212) Thin-Film by Ion-Beam Sputtering
BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering method with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence; almost a constant value of 0.49 below 730 degrees C and decreases linearly with temperature over 730 degrees C. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi2O3, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.