Synthesis of C-N and Si-C-N films was achieved by performing an ion sputtering deposition of carbon and silicon in a nitrogen atmosphere, with simultaneous nitrogen ion bombardment of substrates upon which films were grown. The relationship between the deposition conditions and the composition of the resultant C-N and Si-C-N films was identified using RES. The chemical shifts of C 1s and N 1s binding energy observed through XPS studies revealed that the nitrogen atoms incorporated into the films were chemically bonded to the carbon atoms and, in the ternary case, to the silicon. Hardness measurements were also carried out.