For a GaAs/InP strained structure grown by MBE, the influence of the thickness of the GaAs strained buffer layer on crystal quality was investigated and demonstrated. An X-ray diffractometer was used to measure the grown epitaxial layers. From experimental results, it was found that a thickness of strained layer was required to compensate the effect of misfit dislocation due to the lattice mismatch between GaAs and the InP substrate. The required thickness was deduced to be about 2 mu m.