Electron diffraction investigations carried out on hash evaporated lead manganese sulphide films with lead concentration x varied in the range 0.16 less than or equal to x less than or equal to 0.84, grown on freshly cleaved single crystal KCI substrates maintained at temperature T-s of 65, 130, 165, 225 degrees C, indicate that these films have epitaxial growth with [100] zone axis orientation of the grains in all films and with a single phase fee structure. The single phase fee lattice indicates the presence of ternary materials of the type PbxMn1-xS in the films. The structural characteristics of the films are explained by the atom-by-atom condensation process. Optical absorption studies reveal the presence of a single absorption edge indicating the presence of a single material phase and corroborate the presence of PbxMn1-xS alloys in the films. The direct optical band gap of the film materials varies between 2.26 eV and 0.52 eV as the Pb concentration x is changed from 0.16 to 0.84. The room temperature de resistivity of the films increases with T-s and decreases with increase in Pb concentration x. The variation of resistivity is explained on the basis of a predominant grain boundary conduction mechanism.