In this paper, thin films of BaRuO3 prepared on a Si substrate by the pulsed laser ablation deposition method under oxygen ambient have been studied by means of X-ray diffraction, emission spectroscopy, Rutherford backscattering spectroscopy, RT Hall measurement and resistivity measurement. It is interesting to find that BaRuO3 thin films, having a different thermal history examined in the same temperature range, show different conduction types including metallicity, semiconduction and semiconductor-metal transition. The explanation about the findings are given using a suggested modified energy band diagram. It is believed that the versatile electrical behavior is helpful for the use in electrical contact materials.