Thin Solid Films, Vol.288, No.1-2, 116-119, 1996
Low-Temperature Atmospheric-Pressure Metal-Organic Chemical-Vapor-Deposition of Molybdenum Nitride Thin-Films
Amorphous molybdenum nitride thin films were deposited from tetrakis(dimethylamido) molybdenum(IV), Mo(N(CH3)(2))(4), and ammonia at low substrate temperatures (200-400 degrees C). The films were characterized by Rutherford backscattering spectroscopy, elastic recoil detection and X-ray photoelectron spectroscopy. Rutherford backscattering gave a N/Mo = 1.4-1.5 stoichiometry that did not vary significantly with deposition temperature. The hydrogen content, determined by elastic recoil detection, varied from H/Mo = 1.0 to 0.45 with the content decreasing as the deposition temperature was increased. Carbon contamination was not observed in the film bulk. The films had high resistivities (approximate to 10(4) mu Omega cm).
Keywords:ADVANCED BARRIER LAYERS;MO-N FILMS;MICROELECTRONICS INDUSTRY;TITANIUM;GROWTH;TI(NME2)4;TANTALUM;NIOBIUM;AMMONIA;TIN