We grew epitaxial Si layers from solution (liquid phase epitaxy) on polycrystalline Si sheet material and compared the surface morphology and crystalline perfection of these layers with those of layers grown on cast Si material. Furthermore, using epitaxial layers on cast Si, we studied the correlation between layer thickness, growth time and cooling rate. In the discussion of the measured dependences we make use of simplified calculations of the diffusion coefficient of Si in In solutions and demonstrate the efficiency of Si layer deposition by liquid phase epitaxy.