Band edge related low temperature photoluminescence of a strained Si0.985C0.015 bulk alloy layer grown by molecular beam epitaxy on a Si (100) substrate has been investigated. The high quality layer was grown to a thickness of 1500 Angstrom and was found to be pseudomorphic and tensially strained. We report two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and an intense deep level luminescence peak around 0.778 eV. We band edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy. We also observe a red shift of the energy gap of Si0.985C0.015 alloy with respect to Si, contrary to what is predicted according to the bulk alloy effect.