A suppression of the emitter crowding effect has been studied in a tunnel MOS emitter Auger transistor. The redistribution of the potential of an induced base along the emitter occurs through the activation of an intrinsic source of minority carriers-Auger ionization caused by injected electrons. Non-one-dimensional effects arising from the Auger process have been revealed both in the a.c. and d.c. characteristics of the Auger transistor.