We have proposed a possible method to deposit a-Si:H thin films on the large area substrates using multi electron cyclotron resonance (ECR) sources. The thickness uniformity of 2.0% and surface roughness of 0.24 nm have been obtained from a-Si:H thin films deposited by this method. No particles have been observed from the surface of deposited a-Si:H thin films by atomic force microscopy. The results have shown the possibility that the proposed ECR plasma-enhanced chemical vapor deposition can be used for large area deposition of a-Si:H thin films for TFT-LCD application.