Transparent conducting thin films of antimony-doped tin oxide have been deposited by the sol-gel dip-coating (SGDC) method. Electrical properties are analyzed, and resistivity, Hall mobility, type and nunber of carriers measured as a function of the antimony doping. Optical properties are investigated through the spectral transmission and reflection of the layers. The nature of the forbidden band and the width of the gap are determined. Optical and electrical properties are compared with results obtained on Sb:SnO2 thin films elaborated by other methods such as chemical vapour deposition, sputtering and pyrolysis, and specific properties of the SGDC material are outlined.