Electrostatic bonding has been used to create single crystal silicon layers on glass. Etch stop technology is required for the production of thin silicon layers. implantation of carbon with a dose of 3 E16 cm(-2) at 180 keV is shown to be an effective etch stop. Thin silicon layers have been produced with an average thickness of 3996 Angstrom and a standard deviation of 191 Angstrom across 100 mm diameter glass substrates.