Thin Solid Films, Vol.297, No.1-2, 118-121, 1997
Time Evolution of Surface Porous Silicon Composition Under Different Postetch Treatments
Diffuse reflectance Fourier transform infrared spectroscopy and photoluminescence measurements have been performed on porous silicon layers (PSLs) after different post-etch treatments : immediate drying under flowing N-2, rinsing in deionized water, and ethanol immersion. Layer composition and luminescence were also subsequently monitored during lengthy storage in ambient conditions. This study reveals a different surface composition and morphology arising from each post-anodization procedure, and no clear relation between composition and photoluminescence evolution of PSLs.
Keywords:VISIBLE-LIGHT EMISSION;STRUCTURAL-PROPERTIES;AMORPHOUS-SILICON;DIOXIDE FILMS;LUMINESCENCE;SPECTROSCOPY;TEMPERATURE