Luminescent porous films were obtained from amorphous epitaxial SiC thin films (200-600 nm) deposited on Si substrates using an electrochemical anodization in HF/ethylene glycol solution at high anodic voltages, Porous SiC films possess nearly the same chemical composition as a-SiC ones with slight depletion in carbon. Their photoluminescence peaks at 810 nm and achieves maximum intensity at 150-200K. The luminescence mechanism is thought to be due to Si nanoparticles crystallized in the SiC matrix during the anodization process.