a-SixGe1-x:H films have been produced by employing the hot-filament assisted chemical vapour deposition (HF-CVD) technique for investigation of their structural characteristics using Raman scattering technique, We show here that the HF-CVD technique can be used to produce a-SixGe1-x:H alloy films of desired composition by using extremely low concentrations of GeH4 gas in SiH4 gas leading to what is termed as GeH4 starving filament condition. The mechanism responsible for the growth of the alloy films is discussed and the Raman results have been used to show that the films grown by the HF-CVD technique are structurally better ordered compared to those grown by using the plasma and sputter deposition techniques.