Thin Solid Films, Vol.304, No.1-2, 294-298, 1997
Characterization of Electron-Cyclotron-Resonance Source Plasma for Etching and Deposition
An electron cyclotron resonance (ECR) system has been assembled and microwave plasma was studied in argon, oxygen, carbontetrafloride, and a mixture of oxygen and carbontetrafloride. A cylindrical Langmuir probe was used to measure the current and its variation with respect to input power (50-1000 W), flow rates, probe position in the reactor and pressure. Plasma parameters like ion density N-i, floating potential, electron temperature and plasma potential were estimated. Optimum operational parameters like input power, pressure and gas flow rate were also established.
Keywords:CHEMICAL-VAPOR-DEPOSITION;ION-SOURCE;RADIO-FREQUENCY;MICROWAVE PLASMAS;OPTICAL-EMISSION;FILM DEPOSITION;DISCHARGES;REACTORS;PROBE;SI