Epitaxial CdTe:In films of the thickness down to 0.1 mu m were grown and doped by MBE. The carrier concentration was controlled in the range from 8 X 10(14) to 2 X 10(18) cm(-3) by varying the In flux. Free standing, conducting wires with the linewidth down to 0.3 mu m were fabricated by means of electron-beam lithography followed by wet etching, and visualized by means of scanning-electron and atomic-force microscopies. Magnetoresistance measurements of the films and wires were carried out at temperatures down to 60 mK. A comparison of the data with theoretical predictions for the magnetoconductance in the weakly localized regime demonstrated the presence of temperature-induced dimensional crossovers in the studied structures. The electron phase-coherence length was determined for 1, 2, and 3 dimensional systems and showed to be limited by electron-electron interactions.