Highly transparent and conducting undoped and doped (Mo, Sb, F) tin dioxide films have been prepared by the open air chemical vapour deposition technique. The electrical and optical properties have been studied in detail for films deposited on glass substrates. Surface morphology study by scanning electron microscope shows that for films deposited on glass substrates, Sb-and F-doped films have a larger grain size than undoped ones. Mo-doping, in contrast, produces smaller grains. Films deposited on mica and Al sheet substrate have also a larger grain size compared to those on glass substrate. Films of very high quality in terms of crystallinity, electrical conductivity and optical transmission were obtained when deposited at a substrate temperature of 400 degrees C. The optimum concentration for each dopant, at which the sheet resistance is a minimum, has been determined. 4.5 at.% F-doped SnO2, films show the lowest resistivity, similar to 4 x 10(-4) Ohm cm, and an average optical transmission of 80% at a thickness of 3500 Angstrom.