Highly ionized and accelerated vapor, produced by a pulsed high current vacuum are evaporator (HCA [1]) was used to metallize submicrometer structures. Due to the nearly 100% ionization, the high kinetic energy of the ions and the predominantly directed movement of the plasma particles, deep trenches (in the first experiments with an aspect ratio of up to 2) and vias can be filled homogeneously without voids. A deposition rate of about 100 nm/s can be obtained. In comparison to the traditional are process, the number and the size of droplets are strongly reduced by a specific pulse regime. By a specially designed filter arrangement in a new set-up (phi-HCA), just under casting, a droplet-free filling can be realized. The efficiency of the method and the quality of the metallization is demonstrated for different target materials, such as aluminum and copper.