화학공학소재연구정보센터
Thin Solid Films, Vol.308-309, 470-474, 1997
Copper diffusion in organic polymer resists and inter-level dielectrics
In future generation microelectronic devices, it is anticipated that back end of the line processing may incorporate interconnects composed of Cu metal, and inter-level dielectrics composed of organic polymers. Ln this study, we examined a number of commercially available and new NRL synthesized organic polymer systems towards Cu metal incorporation in the film during application. All the polyimides examined transported Cu, in large part due to the ability of the solvent, 1-methyl-2-pyrrolidinone (NMP), to dissolve Cu. We report examples where the solvent is largely responsible for Cu incorporation into the polymer film, and examples where the polymer and not the solvent is responsible for Cu transport into the film polymethyl methacrylate. Three preparations examined in this study, polystyrene, Teflon AF, and 1,3,5-tris(2-allyloxy-hexafluoro-2-propyl)benzene/poly methyl hydrosiloxane, were found to resist Cu diffusion.