The charge generation and photovoltaic effects observed with thin films of TY in the form of sandwich structures, were analysed by J-V, C-V and photoaction spectra. These measurements were explained in terms of n-type semiconductivity of TY thin film and by the formation of a Schottky barrier with ITO while Ohmic contact with an Al or In electrode. The existence of thermionic emission over the ITO-TY barrier has been observed in low voltage region, whereas at high voltages, the process is dominant by the series resistance of TY layer. Various electrical parameters were calculated from the analysis of J-V and C-V characteristics of the devices and discussed in details. The diode quality factor is higher for Al/TY/ITO than In/TY/ITO device which can be attributed to the formation of thin layer of Al2O3 between Al and TY. The photoaction spectra of the devices reveal that the fraction of light which is absorbed near the ITO-TY interface, to the depth of 180 Angstrom, is responsible for producing the charge carriers. The photovoltaic parameters were also calculated from the J-V characteristics of the devices, under illumination and described in detail.