A new type sputter ion plating system with facing target sputtering source and RF discharge has been developed for hard coating of metals and various compound materials. In this system, the plasma density of 10(10)-10(12) cm(-3) is obtained in the discharge space, and the electron temperature is in the range of 3-6 eV. Moreover, the incident ion energy on the substrate can be controlled by the sheath potential of the de bias applied to the substrate. The adhesive farce of the TiN thin film prepared by this system on the stainless steel substrate is in the range of 20-50 N at the scratch test. The adhesive forcer Vickers hardness. preferred orientation and resistivity of the TiN thin film are influenced significantly by the de substrate bills voltage. Moreover. by controlling the RF power the concentration ratio for Ti and N can be controlled.