Spectroscopic ellipsometry is a very powerful technique for optical characterization of thin-film and bulk materials, but the technique measures functions of complex reflection coefficients, which are usually not of interest per se. The interesting characteristics, such as film thickness, surface roughness thickness and optical functions can be determined only by modeling the near-surface region of the sample. However, the measured quantities are not equivalent to those determined from the modeling. Ellipsometry measurements determine elements of the sample Mueller matrix, but the usual result of modeling calculations are elements of the sample Jones matrix. Often this difference is academic, bur if the sample depolarizes the light, it is not. Ellipsometry calculations also include methods for determining the optical functions of materials. Data for bulk materials are usually accurate for substrates, but are not appropriate for most thin films. Therefore, reasonable parameterizations are quite useful in pet-forming spectroscopic ellipsometry data analysis. Recently, there has been an increased interest in anisotropic materials, both in thin-film and bulk form. A generalized procedure will be presented for calculating the elements of the Jones matrix for any number of layers, any one of which may or may not be uniaxial.