Thin Solid Films, Vol.317, No.1-2, 100-104, 1998
AlN thin films prepared by ion beam induced chemical vapour deposition
AIN thin films have been prepared by bombardment of a suitable substrate with a beam of accelerated N-2(+) ions (400 eV) while a flow of an organometallic precursor is directed onto its surface. This procedure has resulted in very compact and dense films of AIN obtained at room temperature. Since the films were amorphous by XRD, the formation of an AIN phase has been confirmed by different spectroscopies, while the morphology and optical properties of the films have been characterized by electron microscopy and ultraviolet-visible absorption.