Transmission electron microscopy (TEM) is expected to play an important role in the future development of the semiconductor industry because of its high resolution and analytical ability. However, long turnaround time and difficulties in making TEM specimens really affect the application of TEM for routine support of semiconductor manufacture. In this paper, the author presents some recent TEM results on submicron semiconductor devices with mutilayer interconnection to show how to effectively use TEM to support process development and failure analysis. An advanced technique to prepare TEM specimen is also discussed.