In this paper we present recent investigations on the growth of buried single crystalline CoSi2 layers in Si(100) by molecular beam allotaxy. By this growth method the layer formation takes place during a rapid high temperature anneal of silicide precipitates embedded in the Si(100) matrix. During the anneal the precipitates coarsen and coalesce into a uniform layer. The results show that, under certain conditions, self-ordering of the precipitates evolves during the anneal in accordance with recent computer simulation.