In this work, Fe(SiCl3)(2)(CO)(4) was employed as a single source precursor for the formation of FeSi and FeSi2 films at 350-500 degrees C by low-pressure chemical vapour deposition. The films were deposited in a specially constructed her-wall reactor either on Pyrex-glass substrates or on a(100)Si surface. On Pyrex, porous polycrystalline (cubic) FeSi films were obtained. The deposition involved a kinetically controlled, selective decomposition reaction of cis-Fe(SiCl3)(2)(CO)(4). On (100)Si substrates, (001) oriented columnar films of orthorhombic beta-FeSi2 were formed. This change in film composition and texture is ascribed to an imprint effect of the (100)Si surface on the epilayer. beta-FeSi2 can grow on (100)Si with the (010) or (001) direction parallel to the (011) direction of Si with only 1.5 or 2.1% misfit, which allows minimization of interfacial stress and strain. All films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy. Furthermore, microhardness and specific resistivity of the films have been measured.