The huge intrinsic stress in c-BN films has been clearly reduced by post-deposition ion implantation treatment. It seems that implantation induced lattice atom displacement processes are responsible for stress minimizing. On the base of these findings a novel and complex deposition process includes in situ implantation elements will be proposed. An additional ion source can generate in situ defined displacement events beneath the actual growth volume in order to reach a significant relaxation of stress states in the just grown c-BN structure.