A four-step process, i.e. pretreatment, heating, bias nucleation and bias growth, was developed to enhance diamond nucleation and to grow textured diamond(100) on Si(100) in a hot filament chemical vapor deposition chamber. A polycrystalline diamond film was optimally nucleated on Si(100) during the period of nucleation enhancement via a bias of - 250 V for approximately 30 min, with 1% of methane concentration in hydrogen flowing into the chamber. The nucleation density of diamond is approximately 10(7) cm(-2). The uniform nucleation area is as large as 1.5 in. in diameter. A textured diamond(100) film was grown on the nucleated polycrystalline diamond film. simply by adding a bias of -50 V at the growth step. The capability of using negative bias to control the orientation of diamond rains in the hot filament chemical vapor deposition system is new to the diamond community.