Hydrogen plasma surface cleaning of Si at 600 degrees C and the surface stabilization with arsenic-vapor at lower temperature were employed for heteroepitaxial growth of InSb on Si with large lattice mismatch of 19%. The passivated Si surface showed 1 x 1 structure and was stable even in air. InSb was successively grown in hydrogen plasma on the Si surface at 450 degrees C with controlled Sb/In supply ratio. Initial buffer layer grown at 210 degrees C with four average monolayers was found to be optimum with suppressed three-dimensional nucleation and strain with the longitudinal lattice mismatch around 12-13%. Hall mobility of 2 mu m thick heteroepitaxial InSb film on Si successively grown by the total plasma process was 1.2 x 10(4) cm(2)/Vs at room temperature, compared to the lower value of 3 x 10(3) cm2/Vs for the polycrystalline film.